Defect-modulation in α-Ga2O3 molecular beam epitaxial photodetector investigated through pulsed-light persistent-photoconductivity

Defect-modulation in α-Ga2O3 molecular beam epitaxial photodetector investigated through pulsed-light persistent-photoconductivity

α-phase gallium oxide (Ga2O3) features a corundum crystal structure that closely matches the low-cost sapphire substrate commonly used in epitaxy, enabling researchers to perform precise and controllable Ga2O3 epitaxy. It thus offers an excellent material platform for the development of high-power d...

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Bibliographic Details
Main Authors: Hongliang Chang, Yanqing Jia, Abdullah Alquwayzani, Xu Zhang, Redha H. Al Ibrahim, Mohamed Ben Hassine, Dalaver H. Anjum, Qingxiao Wang, Mohamed Nejib Hedhili, Jiarui Gong, Qiaoqiang Gan, Zhenqiang Ma, Tien Khee Ng, Boon S. Ooi
Format: Article
Language:English
Published: AIP Publishing LLC 2025-06-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0266366
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http://dx.doi.org/10.1063/5.0266366

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