(In<italic><sub>x</sub></italic>Ga<sub>1&#x2212;</sub><italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3 </sub> Photodetectors Fabricated on Sapphire at Different Temperatures by PLD

(In<italic><sub>x</sub></italic>Ga<sub>1&#x2212;</sub><italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3 </sub> Photodetectors Fabricated on Sapphire at Different Temperatures by PLD

The (In<italic><sub>x</sub></italic>Ga<sub>1&#x2212;</sub><italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3</sub> photodetectors were fabricated on the single-crystalline (In<italic><sub>x</sub>...

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Bibliographic Details
Main Authors: Ke Zhang, Qian Feng, Lu Huang, Zhuangzhuang Hu, Zhaoqing Feng, Ang Li, Hong Zhou, Xiaoli Lu, Chunfu Zhang, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Photonics Journal
Subjects:
(InxGa1−x)2O3
photodetectors
temperatures
PLD.
Online Access:https://ieeexplore.ieee.org/document/8368328/
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