Influence of the Parameter Dispersion of Domestic 1 200 V SiC MOSFET on Parallel Current Sharing
Based on the 1 200V 20A SiC MOSFET developed by our team, this paper studies the influence of device parameter dispersion on current sharing of parallel components. Firstly, the deviation degree and coefficient of variation of the device are introduced, and the influence of the three wire method and...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
State Grid Energy Research Institute
2021-12-01
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| Series: | Zhongguo dianli |
| Subjects: | |
| Online Access: | https://www.electricpower.com.cn/CN/10.11930/j.issn.1004-9649.202111031 |
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