Effect of Pulsed Photon Processing in Nitrogen Ambient on Optical and Electrophysical Characteristics of Silicon Dioxide Layers of Its Boundaries with Silicon

Effect of Pulsed Photon Processing in Nitrogen Ambient on Optical and Electrophysical Characteristics of Silicon Dioxide Layers of Its Boundaries with Silicon

The influence of pulsed photon processing in a nitrogen medium with an incoherent radiation flux from quartz halogen lamps directed to the non-working side of the wafer, providing heating to 1150 °C in about 7 s, on the optical properties of 17.7 nm thick silicon dioxide layers formed by pyrogenic o...

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Bibliographic Details
Main Authors: N. S. Kovalchuk, V. A. Pilipenko, Ja. A. Solovjov
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2025-07-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
silicon dioxide
pulsed photon processing
pyrogenic oxidation
nitridation
refractive index
electrophysical characteristics.
Online Access:https://doklady.bsuir.by/jour/article/view/4154
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