Effect of Pulsed Photon Processing in Nitrogen Ambient on Optical and Electrophysical Characteristics of Silicon Dioxide Layers of Its Boundaries with Silicon
The influence of pulsed photon processing in a nitrogen medium with an incoherent radiation flux from quartz halogen lamps directed to the non-working side of the wafer, providing heating to 1150 °C in about 7 s, on the optical properties of 17.7 nm thick silicon dioxide layers formed by pyrogenic o...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2025-07-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/4154 |
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