Effect of Pulsed Photon Processing in Nitrogen Ambient on Optical and Electrophysical Characteristics of Silicon Dioxide Layers of Its Boundaries with Silicon
The influence of pulsed photon processing in a nitrogen medium with an incoherent radiation flux from quartz halogen lamps directed to the non-working side of the wafer, providing heating to 1150 °C in about 7 s, on the optical properties of 17.7 nm thick silicon dioxide layers formed by pyrogenic o...
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2025-07-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/4154 |
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| author | N. S. Kovalchuk V. A. Pilipenko Ja. A. Solovjov |
| author_facet | N. S. Kovalchuk V. A. Pilipenko Ja. A. Solovjov |
| author_sort | N. S. Kovalchuk |
| collection | DOAJ |
| description | The influence of pulsed photon processing in a nitrogen medium with an incoherent radiation flux from quartz halogen lamps directed to the non-working side of the wafer, providing heating to 1150 °C in about 7 s, on the optical properties of 17.7 nm thick silicon dioxide layers formed by pyrogenic oxidation of silicon doped with boron with the orientation (100), and on the electrophysical characteristics of the interface with silicon was established using the methods of infrared Fourier spectrometry, spectral ellipsometry, time-of-flight mass spectroscopy of secondary ions, and studies of the current-voltage and capacitance-voltage characteristics. It was revealed that pulsed photon processing of silicon dioxide layers leads to compaction and rearrangement of its structure, as well as to the formation of Si‒N bonds in silicon dioxide, providing nitridation of SiO2. This is indicated by the shift, decrease in the half-width and voltage of the main absorption band of the Si‒O bond, decrease in the refractive index from 1.48 to 1.47 and increase in the layer thickness to 18.2 nm. It is shown that nitridation of SiO2 layers during pulsed photon processing in a nitrogen atmosphere leads to a decrease in the leakage current of the dielectric by four times and its charge density by 3.43 times. This is 2.19 and 3.01 times more, respectively, than during processing in natural atmospheric conditions due to the formation of a layer with an increased nitrogen concentration at the Si–SiO2 boundary. The results obtained can be used to create dielectric coatings in electronic products. |
| format | Article |
| id | doaj-art-e7f1979541bc4c8f8b1559301833fd14 |
| institution | Kabale University |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2025-07-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-e7f1979541bc4c8f8b1559301833fd142025-08-20T03:38:35ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482025-07-0123351110.35596/1729-7648-2025-23-3-5-112069Effect of Pulsed Photon Processing in Nitrogen Ambient on Optical and Electrophysical Characteristics of Silicon Dioxide Layers of Its Boundaries with SiliconN. S. Kovalchuk0V. A. Pilipenko1Ja. A. Solovjov2JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”The influence of pulsed photon processing in a nitrogen medium with an incoherent radiation flux from quartz halogen lamps directed to the non-working side of the wafer, providing heating to 1150 °C in about 7 s, on the optical properties of 17.7 nm thick silicon dioxide layers formed by pyrogenic oxidation of silicon doped with boron with the orientation (100), and on the electrophysical characteristics of the interface with silicon was established using the methods of infrared Fourier spectrometry, spectral ellipsometry, time-of-flight mass spectroscopy of secondary ions, and studies of the current-voltage and capacitance-voltage characteristics. It was revealed that pulsed photon processing of silicon dioxide layers leads to compaction and rearrangement of its structure, as well as to the formation of Si‒N bonds in silicon dioxide, providing nitridation of SiO2. This is indicated by the shift, decrease in the half-width and voltage of the main absorption band of the Si‒O bond, decrease in the refractive index from 1.48 to 1.47 and increase in the layer thickness to 18.2 nm. It is shown that nitridation of SiO2 layers during pulsed photon processing in a nitrogen atmosphere leads to a decrease in the leakage current of the dielectric by four times and its charge density by 3.43 times. This is 2.19 and 3.01 times more, respectively, than during processing in natural atmospheric conditions due to the formation of a layer with an increased nitrogen concentration at the Si–SiO2 boundary. The results obtained can be used to create dielectric coatings in electronic products.https://doklady.bsuir.by/jour/article/view/4154silicon dioxidepulsed photon processingpyrogenic oxidationnitridationrefractive indexelectrophysical characteristics. |
| spellingShingle | N. S. Kovalchuk V. A. Pilipenko Ja. A. Solovjov Effect of Pulsed Photon Processing in Nitrogen Ambient on Optical and Electrophysical Characteristics of Silicon Dioxide Layers of Its Boundaries with Silicon Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki silicon dioxide pulsed photon processing pyrogenic oxidation nitridation refractive index electrophysical characteristics. |
| title | Effect of Pulsed Photon Processing in Nitrogen Ambient on Optical and Electrophysical Characteristics of Silicon Dioxide Layers of Its Boundaries with Silicon |
| title_full | Effect of Pulsed Photon Processing in Nitrogen Ambient on Optical and Electrophysical Characteristics of Silicon Dioxide Layers of Its Boundaries with Silicon |
| title_fullStr | Effect of Pulsed Photon Processing in Nitrogen Ambient on Optical and Electrophysical Characteristics of Silicon Dioxide Layers of Its Boundaries with Silicon |
| title_full_unstemmed | Effect of Pulsed Photon Processing in Nitrogen Ambient on Optical and Electrophysical Characteristics of Silicon Dioxide Layers of Its Boundaries with Silicon |
| title_short | Effect of Pulsed Photon Processing in Nitrogen Ambient on Optical and Electrophysical Characteristics of Silicon Dioxide Layers of Its Boundaries with Silicon |
| title_sort | effect of pulsed photon processing in nitrogen ambient on optical and electrophysical characteristics of silicon dioxide layers of its boundaries with silicon |
| topic | silicon dioxide pulsed photon processing pyrogenic oxidation nitridation refractive index electrophysical characteristics. |
| url | https://doklady.bsuir.by/jour/article/view/4154 |
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