High‐Performance Near‐Ultraviolet Photodetector Using Mo2C/SiC Heterostructure

High‐Performance Near‐Ultraviolet Photodetector Using Mo2C/SiC Heterostructure

In this work, the results for a fabricated photodetector (PD) based on a molybdenum carbide (Mo2C) layer integrated with an n‐doped 4H‐silicon carbide (SiC) substrate, designed to operate in the near‐ultraviolet, are presented. The Mo2C layer is sputtered onto a cleaned SiC substrate, followed by th...

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Bibliographic Details
Main Authors: Sanjida Akter, Dinelka Somaweera, Khalil As’Ham, Salah Abdo, Andrey E. Miroshnichenko, Haroldo Takashi Hattori
Format: Article
Language:English
Published: Wiley-VCH 2025-04-01
Series:Advanced Photonics Research
Subjects:
molybdenum carbides
responsivities
silicon carbides
ultraviolet detections
Online Access:https://doi.org/10.1002/adpr.202400210
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https://doi.org/10.1002/adpr.202400210

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