The Impact of Single-Event Radiation on Latch-Up Effect in High-Temperature CMOS Devices and Its Mechanism

The Impact of Single-Event Radiation on Latch-Up Effect in High-Temperature CMOS Devices and Its Mechanism

This paper investigates the latch-up effect in CMOS devices based on a 28 nm CMOS process within the temperature range of 200 K to 450 K using <i>Sentaurus</i> Technology Computer-Aided Design (TCAD) simulation, with a particular focus on the single-event latch-up (SEL) effect in the hig...

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Bibliographic Details
Main Authors: Bin Wang, Jianguo Cui, Ling Lv, Longsheng Wu
Format: Article
Language:English
Published: MDPI AG 2025-06-01
Series:Micromachines
Subjects:
complementary metal-oxide-semiconductor (CMOS)
single-event latch-up (SEL)
high temperature
linear energy transfer (LET)
Online Access:https://www.mdpi.com/2072-666X/16/7/783
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