Graphene-PbS quantum dot hybrid photodetectors from 200 mm wafer scale processing
Abstract A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. A comprehensive statistical analysis of the electrical data revealed a high yield (96%) and low variation in the 200 mm scale fabricat...
Saved in:
| Main Authors: | , , , , , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-04-01
|
| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-025-96207-z |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850042988417253376 |
|---|---|
| author | Sha Li Zhenxing Wang Bianca Robertz Daniel Neumaier Oihana Txoperena Aranzazu Maestre Amaia Zurutuza Chris Bower Ashley Rushton Yinglin Liu Chris Harris Alexander Bessonov Surama Malik Mark Allen Ivonne Medina-Salazar Tapani Ryhänen Max C. Lemme |
| author_facet | Sha Li Zhenxing Wang Bianca Robertz Daniel Neumaier Oihana Txoperena Aranzazu Maestre Amaia Zurutuza Chris Bower Ashley Rushton Yinglin Liu Chris Harris Alexander Bessonov Surama Malik Mark Allen Ivonne Medina-Salazar Tapani Ryhänen Max C. Lemme |
| author_sort | Sha Li |
| collection | DOAJ |
| description | Abstract A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. A comprehensive statistical analysis of the electrical data revealed a high yield (96%) and low variation in the 200 mm scale fabrication. The GFET-QD devices deliver responsivities of 105 to 106 V/W in the wavelength range from 400 to 1800 nm with a response time of 10 ms. The spectral sensitivity compares well to that obtained via similar GFET-QD photodetectors. The device concept enables gate-tunable suppression or enhancement of the photovoltage, which may be exploited for electric shutter operation by toggling between the signal capture and shutter states. The devices show good stability over a wide operation range. Furthermore, an integration solution with complementary metal-oxide-semiconductor technology is presented to realize image-sensor-array chips and a proof-of-concept image system. This work demonstrates the potential for the volume manufacture of infrared photodetectors for a wide range of imaging applications. |
| format | Article |
| id | doaj-art-e61b6ed97ff543ccbbe21a5511f62d2e |
| institution | DOAJ |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj-art-e61b6ed97ff543ccbbe21a5511f62d2e2025-08-20T02:55:21ZengNature PortfolioScientific Reports2045-23222025-04-011511810.1038/s41598-025-96207-zGraphene-PbS quantum dot hybrid photodetectors from 200 mm wafer scale processingSha Li0Zhenxing Wang1Bianca Robertz2Daniel Neumaier3Oihana Txoperena4Aranzazu Maestre5Amaia Zurutuza6Chris Bower7Ashley Rushton8Yinglin Liu9Chris Harris10Alexander Bessonov11Surama Malik12Mark Allen13Ivonne Medina-Salazar14Tapani Ryhänen15Max C. Lemme16AMO GmbHAMO GmbHAMO GmbHAMO GmbHGraphenea Semiconductor SLUGraphenea Semiconductor SLUGraphenea Semiconductor SLUEmberion LimitedEmberion LimitedEmberion LimitedEmberion LimitedEmberion LimitedEmberion LimitedEmberion LimitedEmberion LimitedEmberion OyAMO GmbHAbstract A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. A comprehensive statistical analysis of the electrical data revealed a high yield (96%) and low variation in the 200 mm scale fabrication. The GFET-QD devices deliver responsivities of 105 to 106 V/W in the wavelength range from 400 to 1800 nm with a response time of 10 ms. The spectral sensitivity compares well to that obtained via similar GFET-QD photodetectors. The device concept enables gate-tunable suppression or enhancement of the photovoltage, which may be exploited for electric shutter operation by toggling between the signal capture and shutter states. The devices show good stability over a wide operation range. Furthermore, an integration solution with complementary metal-oxide-semiconductor technology is presented to realize image-sensor-array chips and a proof-of-concept image system. This work demonstrates the potential for the volume manufacture of infrared photodetectors for a wide range of imaging applications.https://doi.org/10.1038/s41598-025-96207-z |
| spellingShingle | Sha Li Zhenxing Wang Bianca Robertz Daniel Neumaier Oihana Txoperena Aranzazu Maestre Amaia Zurutuza Chris Bower Ashley Rushton Yinglin Liu Chris Harris Alexander Bessonov Surama Malik Mark Allen Ivonne Medina-Salazar Tapani Ryhänen Max C. Lemme Graphene-PbS quantum dot hybrid photodetectors from 200 mm wafer scale processing Scientific Reports |
| title | Graphene-PbS quantum dot hybrid photodetectors from 200 mm wafer scale processing |
| title_full | Graphene-PbS quantum dot hybrid photodetectors from 200 mm wafer scale processing |
| title_fullStr | Graphene-PbS quantum dot hybrid photodetectors from 200 mm wafer scale processing |
| title_full_unstemmed | Graphene-PbS quantum dot hybrid photodetectors from 200 mm wafer scale processing |
| title_short | Graphene-PbS quantum dot hybrid photodetectors from 200 mm wafer scale processing |
| title_sort | graphene pbs quantum dot hybrid photodetectors from 200 mm wafer scale processing |
| url | https://doi.org/10.1038/s41598-025-96207-z |
| work_keys_str_mv | AT shali graphenepbsquantumdothybridphotodetectorsfrom200mmwaferscaleprocessing AT zhenxingwang graphenepbsquantumdothybridphotodetectorsfrom200mmwaferscaleprocessing AT biancarobertz graphenepbsquantumdothybridphotodetectorsfrom200mmwaferscaleprocessing AT danielneumaier graphenepbsquantumdothybridphotodetectorsfrom200mmwaferscaleprocessing AT oihanatxoperena graphenepbsquantumdothybridphotodetectorsfrom200mmwaferscaleprocessing AT aranzazumaestre graphenepbsquantumdothybridphotodetectorsfrom200mmwaferscaleprocessing AT amaiazurutuza graphenepbsquantumdothybridphotodetectorsfrom200mmwaferscaleprocessing AT chrisbower graphenepbsquantumdothybridphotodetectorsfrom200mmwaferscaleprocessing AT ashleyrushton graphenepbsquantumdothybridphotodetectorsfrom200mmwaferscaleprocessing AT yinglinliu graphenepbsquantumdothybridphotodetectorsfrom200mmwaferscaleprocessing AT chrisharris graphenepbsquantumdothybridphotodetectorsfrom200mmwaferscaleprocessing AT alexanderbessonov graphenepbsquantumdothybridphotodetectorsfrom200mmwaferscaleprocessing AT suramamalik graphenepbsquantumdothybridphotodetectorsfrom200mmwaferscaleprocessing AT markallen graphenepbsquantumdothybridphotodetectorsfrom200mmwaferscaleprocessing AT ivonnemedinasalazar graphenepbsquantumdothybridphotodetectorsfrom200mmwaferscaleprocessing AT tapaniryhanen graphenepbsquantumdothybridphotodetectorsfrom200mmwaferscaleprocessing AT maxclemme graphenepbsquantumdothybridphotodetectorsfrom200mmwaferscaleprocessing |