Development of thermal memory cells on silicon using the floating zero algorithm
Abstract In this article, we investigate the development and use of thermal memory elements based on thin-film aluminum devices on silicon wafer. To stabilize their operation and reduce the number of errors during the read/write process of thermal information in such devices, we propose an algorithm...
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| Main Authors: | Yury N. Kulchin, Arkady A. Skvortsov, Vladimir K. Nikolaev, Olga V. Volodina |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-02-01
|
| Series: | Scientific Reports |
| Subjects: | |
| Online Access: | https://doi.org/10.1038/s41598-025-89566-0 |
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