Development of thermal memory cells on silicon using the floating zero algorithm

Abstract In this article, we investigate the development and use of thermal memory elements based on thin-film aluminum devices on silicon wafer. To stabilize their operation and reduce the number of errors during the read/write process of thermal information in such devices, we propose an algorithm...

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Bibliographic Details
Main Authors: Yury N. Kulchin, Arkady A. Skvortsov, Vladimir K. Nikolaev, Olga V. Volodina
Format: Article
Language:English
Published: Nature Portfolio 2025-02-01
Series:Scientific Reports
Subjects:
Online Access:https://doi.org/10.1038/s41598-025-89566-0
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