Development of thermal memory cells on silicon using the floating zero algorithm
Abstract In this article, we investigate the development and use of thermal memory elements based on thin-film aluminum devices on silicon wafer. To stabilize their operation and reduce the number of errors during the read/write process of thermal information in such devices, we propose an algorithm...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-02-01
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| Series: | Scientific Reports |
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| Online Access: | https://doi.org/10.1038/s41598-025-89566-0 |
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| author | Yury N. Kulchin Arkady A. Skvortsov Vladimir K. Nikolaev Olga V. Volodina |
| author_facet | Yury N. Kulchin Arkady A. Skvortsov Vladimir K. Nikolaev Olga V. Volodina |
| author_sort | Yury N. Kulchin |
| collection | DOAJ |
| description | Abstract In this article, we investigate the development and use of thermal memory elements based on thin-film aluminum devices on silicon wafer. To stabilize their operation and reduce the number of errors during the read/write process of thermal information in such devices, we propose an algorithm (referred to as the floating zero algorithm) for adjusting the temperature conditions of thermal memory cells. This algorithm controls the thermal memory cells on silicon under varying ambient temperature conditions. We tested the algorithm performance using an experimental thermal memory sample at room temperature. Additionally, we conducted a study on the degradation process of the sample under high electrothermal loading conditions. The results showed that the degradation process in the sample starts when a single current pulse of duration τ i ≥ 100 µs and amplitude density j i ≥ 8.5 × 1010 A/m2) flows through the device. We propose a criterion for determining the safe operation area γ of the device under investigation and experimentally determine its value γ = 6.0(VA√s). |
| format | Article |
| id | doaj-art-e59131157bd54acaa5562c63ad405bb4 |
| institution | OA Journals |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj-art-e59131157bd54acaa5562c63ad405bb42025-08-20T02:12:58ZengNature PortfolioScientific Reports2045-23222025-02-0115111010.1038/s41598-025-89566-0Development of thermal memory cells on silicon using the floating zero algorithmYury N. Kulchin0Arkady A. Skvortsov1Vladimir K. Nikolaev2Olga V. Volodina3Institute of Automation and Control Processes, Far Eastern Branch of the Russian Academy of SciencesMoscow Polytechnic UniversityMoscow Polytechnic UniversityMoscow Polytechnic UniversityAbstract In this article, we investigate the development and use of thermal memory elements based on thin-film aluminum devices on silicon wafer. To stabilize their operation and reduce the number of errors during the read/write process of thermal information in such devices, we propose an algorithm (referred to as the floating zero algorithm) for adjusting the temperature conditions of thermal memory cells. This algorithm controls the thermal memory cells on silicon under varying ambient temperature conditions. We tested the algorithm performance using an experimental thermal memory sample at room temperature. Additionally, we conducted a study on the degradation process of the sample under high electrothermal loading conditions. The results showed that the degradation process in the sample starts when a single current pulse of duration τ i ≥ 100 µs and amplitude density j i ≥ 8.5 × 1010 A/m2) flows through the device. We propose a criterion for determining the safe operation area γ of the device under investigation and experimentally determine its value γ = 6.0(VA√s).https://doi.org/10.1038/s41598-025-89566-0Thermal memory element on siliconRead/write thermal informationError correctionFloating zero algorithmElectrothermal degradation processSafe operation area |
| spellingShingle | Yury N. Kulchin Arkady A. Skvortsov Vladimir K. Nikolaev Olga V. Volodina Development of thermal memory cells on silicon using the floating zero algorithm Scientific Reports Thermal memory element on silicon Read/write thermal information Error correction Floating zero algorithm Electrothermal degradation process Safe operation area |
| title | Development of thermal memory cells on silicon using the floating zero algorithm |
| title_full | Development of thermal memory cells on silicon using the floating zero algorithm |
| title_fullStr | Development of thermal memory cells on silicon using the floating zero algorithm |
| title_full_unstemmed | Development of thermal memory cells on silicon using the floating zero algorithm |
| title_short | Development of thermal memory cells on silicon using the floating zero algorithm |
| title_sort | development of thermal memory cells on silicon using the floating zero algorithm |
| topic | Thermal memory element on silicon Read/write thermal information Error correction Floating zero algorithm Electrothermal degradation process Safe operation area |
| url | https://doi.org/10.1038/s41598-025-89566-0 |
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