Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs
In this study, low-temperature deuterium annealing (LTDA) at 300 °C is proposed to enhance both the performance and reliability of silicon-based high-k metal gate (HKMG) MOSFETs. A comparative study with hydrogen (H2) annealing under identical conditions is conducted to evaluate the speci...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10758816/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832584004539252736 |
|---|---|
| author | Tae-Hyun Kil Ju-Won Yeon Hyo-Jun Park Moon-Kwon Lee Eui-Cheol Yun Min-Woo Kim Sang-Min Kang Jun-Young Park |
| author_facet | Tae-Hyun Kil Ju-Won Yeon Hyo-Jun Park Moon-Kwon Lee Eui-Cheol Yun Min-Woo Kim Sang-Min Kang Jun-Young Park |
| author_sort | Tae-Hyun Kil |
| collection | DOAJ |
| description | In this study, low-temperature deuterium annealing (LTDA) at 300 °C is proposed to enhance both the performance and reliability of silicon-based high-k metal gate (HKMG) MOSFETs. A comparative study with hydrogen (H2) annealing under identical conditions is conducted to evaluate the specific impact of deuterium (D2). Comprehensive DC characterizations and evaluations of stress immunity under hot-carrier injection (HCI) and positive bias stress (PBS) conditions, are performed. The results confirm that even at a low temperature of 300 °C, D2 has a more substantial effect on device performance and reliability compared to H2. This study provides a guideline for reducing the annealing temperature in the fabrication of HKMG MOSFETs. |
| format | Article |
| id | doaj-art-e5445f0aec104a1a8d3c76b41220648b |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-e5445f0aec104a1a8d3c76b41220648b2025-01-28T00:00:42ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-01121030103310.1109/JEDS.2024.350273810758816Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETsTae-Hyun Kil0Ju-Won Yeon1Hyo-Jun Park2Moon-Kwon Lee3Eui-Cheol Yun4Min-Woo Kim5Sang-Min Kang6Jun-Young Park7https://orcid.org/0000-0003-4830-9739School of Semiconductor Engineering, Chungbuk National University, Cheongju, Republic of KoreaSchool of Semiconductor Engineering, Chungbuk National University, Cheongju, Republic of KoreaSchool of Semiconductor Engineering, Chungbuk National University, Cheongju, Republic of KoreaSchool of Semiconductor Engineering, Chungbuk National University, Cheongju, Republic of KoreaSchool of Semiconductor Engineering, Chungbuk National University, Cheongju, Republic of KoreaSchool of Semiconductor Engineering, Chungbuk National University, Cheongju, Republic of KoreaSchool of Semiconductor Engineering, Chungbuk National University, Cheongju, Republic of KoreaSchool of Semiconductor Engineering, Chungbuk National University, Cheongju, Republic of KoreaIn this study, low-temperature deuterium annealing (LTDA) at 300 °C is proposed to enhance both the performance and reliability of silicon-based high-k metal gate (HKMG) MOSFETs. A comparative study with hydrogen (H2) annealing under identical conditions is conducted to evaluate the specific impact of deuterium (D2). Comprehensive DC characterizations and evaluations of stress immunity under hot-carrier injection (HCI) and positive bias stress (PBS) conditions, are performed. The results confirm that even at a low temperature of 300 °C, D2 has a more substantial effect on device performance and reliability compared to H2. This study provides a guideline for reducing the annealing temperature in the fabrication of HKMG MOSFETs.https://ieeexplore.ieee.org/document/10758816/Annealinghigh-k dielectrichot-carrier injection (HCI)low-temperature deuterium annealing (LTDA)MOSFETspositive bias stress (PBS) |
| spellingShingle | Tae-Hyun Kil Ju-Won Yeon Hyo-Jun Park Moon-Kwon Lee Eui-Cheol Yun Min-Woo Kim Sang-Min Kang Jun-Young Park Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs IEEE Journal of the Electron Devices Society Annealing high-k dielectric hot-carrier injection (HCI) low-temperature deuterium annealing (LTDA) MOSFETs positive bias stress (PBS) |
| title | Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs |
| title_full | Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs |
| title_fullStr | Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs |
| title_full_unstemmed | Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs |
| title_short | Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs |
| title_sort | low temperature deuterium annealing for hfo x2082 sio x2082 gate dielectric in silicon mosfets |
| topic | Annealing high-k dielectric hot-carrier injection (HCI) low-temperature deuterium annealing (LTDA) MOSFETs positive bias stress (PBS) |
| url | https://ieeexplore.ieee.org/document/10758816/ |
| work_keys_str_mv | AT taehyunkil lowtemperaturedeuteriumannealingforhfox2082siox2082gatedielectricinsiliconmosfets AT juwonyeon lowtemperaturedeuteriumannealingforhfox2082siox2082gatedielectricinsiliconmosfets AT hyojunpark lowtemperaturedeuteriumannealingforhfox2082siox2082gatedielectricinsiliconmosfets AT moonkwonlee lowtemperaturedeuteriumannealingforhfox2082siox2082gatedielectricinsiliconmosfets AT euicheolyun lowtemperaturedeuteriumannealingforhfox2082siox2082gatedielectricinsiliconmosfets AT minwookim lowtemperaturedeuteriumannealingforhfox2082siox2082gatedielectricinsiliconmosfets AT sangminkang lowtemperaturedeuteriumannealingforhfox2082siox2082gatedielectricinsiliconmosfets AT junyoungpark lowtemperaturedeuteriumannealingforhfox2082siox2082gatedielectricinsiliconmosfets |