An ultra‐thin switched state active frequency selective surface absorber with wide bandwidth using semi‐analytical method
Abstract Using low‐voltage forward biased PIN diodes, an ultrathin switched states active frequency selective surface based microwave absorber is designed. Using a semi‐analytical method, the NXP#BAP70‐03 PIN diode‐based single polarised unit‐cell of the active FSS absorber is rigorously analysed an...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2024-12-01
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| Series: | IET Microwaves, Antennas & Propagation |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/mia2.12511 |
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