Approaches for reducing metallization-induced losses in industrial TOPCon solar cells

Minimizing carrier recombination in silicon solar cells is key to increase the conversion efficiency, as recombination affects both the fill factor and the open circuit voltage. Recombination at metal-semiconductor interfaces plays a crucial part in this, however, processing conditions which lead to...

Full description

Saved in:
Bibliographic Details
Main Authors: Mack Sebastian, Ourinson Daniel, Meßmer Marius, Teßmann Christopher, Krieg Katrin, Benick Jan, Huyeng Jonas D., Greulich Johannes, Wolf Andreas
Format: Article
Language:English
Published: EDP Sciences 2025-01-01
Series:EPJ Photovoltaics
Subjects:
Online Access:https://www.epj-pv.org/articles/epjpv/full_html/2025/01/pv20240064/pv20240064.html
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1841526765928841216
author Mack Sebastian
Ourinson Daniel
Meßmer Marius
Teßmann Christopher
Krieg Katrin
Benick Jan
Huyeng Jonas D.
Greulich Johannes
Wolf Andreas
author_facet Mack Sebastian
Ourinson Daniel
Meßmer Marius
Teßmann Christopher
Krieg Katrin
Benick Jan
Huyeng Jonas D.
Greulich Johannes
Wolf Andreas
author_sort Mack Sebastian
collection DOAJ
description Minimizing carrier recombination in silicon solar cells is key to increase the conversion efficiency, as recombination affects both the fill factor and the open circuit voltage. Recombination at metal-semiconductor interfaces plays a crucial part in this, however, processing conditions which lead to low recombination, such as e.g., a low firing set temperature or the use of thick dielectrics, typically result in increased contact resistivities. Also, a too low firing set temperature leads to an incomplete hydrogenation of the interfaces. Recently, laser-enhanced contact optimization has been introduced to decouple recombination and contact properties to some extent, which allows for high fill factors and high open circuit voltages, and which explains the growing interest from manufacturers in that technology. We elucidate on the need for improved hydrogenation of interfaces, which contradicts the wish to decrease firing temperatures for reduced carrier recombination at metal-semiconductor interfaces. The implementation of an additional annealing step, e.g. in a tube furnace, after dielectric surface passivation is shown to lead to improved passivation properties so that the thermal budget during contact firing can be optimized to minimize contact resistivities. Overall, contact optimization allows for solar cell efficiencies of 24.1%, measured at an industrial cell tester, for a traditional approach without additional annealing step, and applying an AgAl front side metallization paste. A comparison of Ag and AgAl front side metallization pastes reveals a higher open circuit voltage for the Ag paste, at the drawback of an increased contact resistivity.
format Article
id doaj-art-e274584cc6a44dc79f5c529e176b03be
institution Kabale University
issn 2105-0716
language English
publishDate 2025-01-01
publisher EDP Sciences
record_format Article
series EPJ Photovoltaics
spelling doaj-art-e274584cc6a44dc79f5c529e176b03be2025-01-16T11:24:47ZengEDP SciencesEPJ Photovoltaics2105-07162025-01-0116510.1051/epjpv/2024050pv20240064Approaches for reducing metallization-induced losses in industrial TOPCon solar cellsMack Sebastian0https://orcid.org/0000-0003-0030-3661Ourinson Daniel1Meßmer Marius2Teßmann Christopher3Krieg Katrin4Benick Jan5Huyeng Jonas D.6https://orcid.org/0000-0003-2735-8056Greulich Johannes7Wolf Andreas8Fraunhofer Institute for Solar Energy Systems ISEFraunhofer Institute for Solar Energy Systems ISEFraunhofer Institute for Solar Energy Systems ISEFraunhofer Institute for Applied Solid State Physics IAFFraunhofer Institute for Solar Energy Systems ISEFraunhofer Institute for Solar Energy Systems ISEFraunhofer Institute for Solar Energy Systems ISEFraunhofer Institute for Solar Energy Systems ISEFraunhofer Institute for Solar Energy Systems ISEMinimizing carrier recombination in silicon solar cells is key to increase the conversion efficiency, as recombination affects both the fill factor and the open circuit voltage. Recombination at metal-semiconductor interfaces plays a crucial part in this, however, processing conditions which lead to low recombination, such as e.g., a low firing set temperature or the use of thick dielectrics, typically result in increased contact resistivities. Also, a too low firing set temperature leads to an incomplete hydrogenation of the interfaces. Recently, laser-enhanced contact optimization has been introduced to decouple recombination and contact properties to some extent, which allows for high fill factors and high open circuit voltages, and which explains the growing interest from manufacturers in that technology. We elucidate on the need for improved hydrogenation of interfaces, which contradicts the wish to decrease firing temperatures for reduced carrier recombination at metal-semiconductor interfaces. The implementation of an additional annealing step, e.g. in a tube furnace, after dielectric surface passivation is shown to lead to improved passivation properties so that the thermal budget during contact firing can be optimized to minimize contact resistivities. Overall, contact optimization allows for solar cell efficiencies of 24.1%, measured at an industrial cell tester, for a traditional approach without additional annealing step, and applying an AgAl front side metallization paste. A comparison of Ag and AgAl front side metallization pastes reveals a higher open circuit voltage for the Ag paste, at the drawback of an increased contact resistivity.https://www.epj-pv.org/articles/epjpv/full_html/2025/01/pv20240064/pv20240064.htmltopconpassivating contactsrecombinationsolar cells
spellingShingle Mack Sebastian
Ourinson Daniel
Meßmer Marius
Teßmann Christopher
Krieg Katrin
Benick Jan
Huyeng Jonas D.
Greulich Johannes
Wolf Andreas
Approaches for reducing metallization-induced losses in industrial TOPCon solar cells
EPJ Photovoltaics
topcon
passivating contacts
recombination
solar cells
title Approaches for reducing metallization-induced losses in industrial TOPCon solar cells
title_full Approaches for reducing metallization-induced losses in industrial TOPCon solar cells
title_fullStr Approaches for reducing metallization-induced losses in industrial TOPCon solar cells
title_full_unstemmed Approaches for reducing metallization-induced losses in industrial TOPCon solar cells
title_short Approaches for reducing metallization-induced losses in industrial TOPCon solar cells
title_sort approaches for reducing metallization induced losses in industrial topcon solar cells
topic topcon
passivating contacts
recombination
solar cells
url https://www.epj-pv.org/articles/epjpv/full_html/2025/01/pv20240064/pv20240064.html
work_keys_str_mv AT macksebastian approachesforreducingmetallizationinducedlossesinindustrialtopconsolarcells
AT ourinsondaniel approachesforreducingmetallizationinducedlossesinindustrialtopconsolarcells
AT meßmermarius approachesforreducingmetallizationinducedlossesinindustrialtopconsolarcells
AT teßmannchristopher approachesforreducingmetallizationinducedlossesinindustrialtopconsolarcells
AT kriegkatrin approachesforreducingmetallizationinducedlossesinindustrialtopconsolarcells
AT benickjan approachesforreducingmetallizationinducedlossesinindustrialtopconsolarcells
AT huyengjonasd approachesforreducingmetallizationinducedlossesinindustrialtopconsolarcells
AT greulichjohannes approachesforreducingmetallizationinducedlossesinindustrialtopconsolarcells
AT wolfandreas approachesforreducingmetallizationinducedlossesinindustrialtopconsolarcells