280–300 GHz SiGe‐InP hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate

280–300 GHz SiGe‐InP hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate

Abstract In this paper, a 280–300 GHz hybrid‐integrated transmitter is proposed. The advantages of the SiGe and InP chips are fully made use by integrating these two chips. For low cost and high integration, the local oscillator chain and mixer are based on chips in SiGe technology, and the 300‐GHz...

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Bibliographic Details
Main Authors: Haiyan Lu, Jixin Chen, Pinpin Yan, Si‐Yuan Tang, Yu Zheng, Sidou Zheng, Wei Cheng, Yan Sun, Peigen Zhou, Long Chang, Longzhu Cai, Zhi Hao Jiang, Hongqi Tao, Tangsheng Chen, Wei Hong
Format: Article
Language:English
Published: Wiley 2024-12-01
Series:IET Microwaves, Antennas & Propagation
Subjects:
BiCMOS integrated circuits
III‐V semiconductors
system‐on‐chip
transmitters
Online Access:https://doi.org/10.1049/mia2.12532
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https://doi.org/10.1049/mia2.12532

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