Investigation on V2O5 Thin Films for Field Effect Transistor Applications
V2O5 thin films are analyzed for the substitution of SiO2 to reduce the leakage current in devices when SiO2 becomes ultrathin in submicron technology. Vanadium pentoxide (V2O5) has a high-k dielectric constant of 25 and can be replaced as a gate oxide in the field-effect transistor. V2O5 is deposit...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2021/2414589 |
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