Diode Based on Amorphous SiC
Diode structure on the basis of amorphous silicon carbide and p-type polycrystalline silicon (Eurosolar) were obtained with magnetron RF-nonreactive sputtering method from solid-phase target in argon atmosphere.
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2013-12-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2013/4/articles/jnep_2013_V5_04029.pdf |
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