Vertical‐Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas
Abstract Owing to the high reactivity and diffusivity of Ag and Cu ions, controlling the atomic filament formation and rupture processes in conductive bridge random‐access memory (CBRAM) is challenging. In this study, it is demonstrated that by using a 2D electron gas (2DEG) as the bottom electrode...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-05-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400650 |
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