Vertical‐Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas

Vertical‐Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas

Abstract Owing to the high reactivity and diffusivity of Ag and Cu ions, controlling the atomic filament formation and rupture processes in conductive bridge random‐access memory (CBRAM) is challenging. In this study, it is demonstrated that by using a 2D electron gas (2DEG) as the bottom electrode...

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Bibliographic Details
Main Authors: Jiho Kim, Ohhyuk Kwon, Jongseon Seo, Hyunsang Hwang
Format: Article
Language:English
Published: Wiley-VCH 2025-05-01
Series:Advanced Electronic Materials
Subjects:
2D electron gas
conductive bridge random access memory
partial filament
switching uniformity
tunnel gap control
Online Access:https://doi.org/10.1002/aelm.202400650
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https://doi.org/10.1002/aelm.202400650

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