Kim, J., Kwon, O., Seo, J., & Hwang, H. Vertical‐Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas. Wiley-VCH.
Chicago Style (17th ed.) CitationKim, Jiho, Ohhyuk Kwon, Jongseon Seo, and Hyunsang Hwang. Vertical‐Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas. Wiley-VCH.
MLA (9th ed.) CitationKim, Jiho, et al. Vertical‐Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas. Wiley-VCH.
Warning: These citations may not always be 100% accurate.