The Extraction of the Density of States of Atomic-Layer-Deposited ZnO Transistors by Analyzing Gate-Dependent Field-Effect Mobility
In this study, we investigated the density of states extraction method for atomic-deposited ZnO thin-film transistors (TFTs) by analyzing gate-dependent field-effect mobility. The atomic layer deposition (ALD) method offers ultra-thin and smooth ZnO films, but these films suffer from interface and s...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-10-01
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| Series: | Electronic Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2673-3978/5/4/16 |
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