Optical properties of nitride-rich SiNx and its use in CMOS-compatible near-UV Bragg filter fabrication
Nitride-rich silicon-nitride (SiNx) is being explored for its potential as a suitable optical material for use in microsystems operating in the near-UV spectral range. Although silicon-rich SiNx is widely accepted as a CMOS-compatible dielectric and micromechanical material, its optical absorption l...
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| Language: | English |
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Elsevier
2024-12-01
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| Series: | Optical Materials: X |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590147824000603 |
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| author | Reinoud F. Wolffenbuttel Declan Winship Yutao Qin Yogesh Gianchandani David Bilby Jaco H. Visser |
| author_facet | Reinoud F. Wolffenbuttel Declan Winship Yutao Qin Yogesh Gianchandani David Bilby Jaco H. Visser |
| author_sort | Reinoud F. Wolffenbuttel |
| collection | DOAJ |
| description | Nitride-rich silicon-nitride (SiNx) is being explored for its potential as a suitable optical material for use in microsystems operating in the near-UV spectral range. Although silicon-rich SiNx is widely accepted as a CMOS-compatible dielectric and micromechanical material, its optical absorption limits application to the visible to near-IR spectral range. However, this work shows that a balance can be achieved between a sufficiently high index of refraction (n> 2) and an acceptable optical loss (k<10−3) in nitride-rich SiNx of appropriate composition (x∼1.45). Bragg reflectors with a design wavelength at λo= 330 nm are used for validation. PECVD is used for sample preparation and experiments confirm that the spectral range available for use of SiNx-based optical microsystems extends to wavelengths as low as 300 nm. |
| format | Article |
| id | doaj-art-dd40c4f5c0e542a19a68b22fe5c0ef22 |
| institution | OA Journals |
| issn | 2590-1478 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Optical Materials: X |
| spelling | doaj-art-dd40c4f5c0e542a19a68b22fe5c0ef222025-08-20T02:38:11ZengElsevierOptical Materials: X2590-14782024-12-012410034810.1016/j.omx.2024.100348Optical properties of nitride-rich SiNx and its use in CMOS-compatible near-UV Bragg filter fabricationReinoud F. Wolffenbuttel0Declan Winship1Yutao Qin2Yogesh Gianchandani3David Bilby4Jaco H. Visser5Laboratory for Electronic Instrumentation, Department of Microelectronics, Delft University of Technology, 2628 CD Delft, The Netherlands; Corresponding author.Center for Wireless Integrated MicroSensing and Systems (WIMS2) and the Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USACenter for Wireless Integrated MicroSensing and Systems (WIMS2) and the Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USACenter for Wireless Integrated MicroSensing and Systems (WIMS2) and the Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USAResearch and Advanced Engineering, Ford Motor Company, Dearborn, MI 48121, USAResearch and Advanced Engineering, Ford Motor Company, Dearborn, MI 48121, USANitride-rich silicon-nitride (SiNx) is being explored for its potential as a suitable optical material for use in microsystems operating in the near-UV spectral range. Although silicon-rich SiNx is widely accepted as a CMOS-compatible dielectric and micromechanical material, its optical absorption limits application to the visible to near-IR spectral range. However, this work shows that a balance can be achieved between a sufficiently high index of refraction (n> 2) and an acceptable optical loss (k<10−3) in nitride-rich SiNx of appropriate composition (x∼1.45). Bragg reflectors with a design wavelength at λo= 330 nm are used for validation. PECVD is used for sample preparation and experiments confirm that the spectral range available for use of SiNx-based optical microsystems extends to wavelengths as low as 300 nm.http://www.sciencedirect.com/science/article/pii/S2590147824000603Silicon-nitrideIntegrated silicon optical microsystemsNear-UV optical filterOptical MEMS technologyCMOS compatibility |
| spellingShingle | Reinoud F. Wolffenbuttel Declan Winship Yutao Qin Yogesh Gianchandani David Bilby Jaco H. Visser Optical properties of nitride-rich SiNx and its use in CMOS-compatible near-UV Bragg filter fabrication Optical Materials: X Silicon-nitride Integrated silicon optical microsystems Near-UV optical filter Optical MEMS technology CMOS compatibility |
| title | Optical properties of nitride-rich SiNx and its use in CMOS-compatible near-UV Bragg filter fabrication |
| title_full | Optical properties of nitride-rich SiNx and its use in CMOS-compatible near-UV Bragg filter fabrication |
| title_fullStr | Optical properties of nitride-rich SiNx and its use in CMOS-compatible near-UV Bragg filter fabrication |
| title_full_unstemmed | Optical properties of nitride-rich SiNx and its use in CMOS-compatible near-UV Bragg filter fabrication |
| title_short | Optical properties of nitride-rich SiNx and its use in CMOS-compatible near-UV Bragg filter fabrication |
| title_sort | optical properties of nitride rich sinx and its use in cmos compatible near uv bragg filter fabrication |
| topic | Silicon-nitride Integrated silicon optical microsystems Near-UV optical filter Optical MEMS technology CMOS compatibility |
| url | http://www.sciencedirect.com/science/article/pii/S2590147824000603 |
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