Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics
As the demand for high voltage levels and fast charging rates in the electric power industry increases, the third-generation semiconductor materials typified by GaN with a wide bandgap and high electron mobility have become a central material in technological development. Nonetheless, thermal manage...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-03-01
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| Series: | Molecules |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1420-3049/30/6/1307 |
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