Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics

Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics

As the demand for high voltage levels and fast charging rates in the electric power industry increases, the third-generation semiconductor materials typified by GaN with a wide bandgap and high electron mobility have become a central material in technological development. Nonetheless, thermal manage...

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Bibliographic Details
Main Authors: Yi Peng, Lingyun Liu, Qingfeng Xu, Yuqiang Luo, Jianzhi Bai, Xifeng Xie, Huanbing Wei, Wenwang Wei, Kai Xiao, Wenhong Sun
Format: Article
Language:English
Published: MDPI AG 2025-03-01
Series:Molecules
Subjects:
GaN based
PECVD
chemical active site
h-BN/GaN heterostructure
heat dissipation
Online Access:https://www.mdpi.com/1420-3049/30/6/1307
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