Electron Scattering in Boron Hexogonal Nitride
Investigation the effects of electron scattering in boron hexogonal nitride (h-BN) was performed. At present, material h-BN, together with graphene, is considered to be one of the most promising materials for the formation of new semiconductor devices with good characteristics for the ranges of ultr...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2022-04-01
|
| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/3305 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|