Enhancing Carriers’ Confinement by Introducing BAlGaN Quantum Barriers for the Better Optoelectronic Performance of Deep UV LEDs
Ultraviolet light-emitting diodes (LEDs) based on Aluminum Gallium Nitride (AlGaN) suffer from poor carriers’ confinement effect, one possible solution to this problem is to increase the barrier heights for carriers by increasing Aluminum content in quantum barriers (QBs), which results in a higher...
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MDPI AG
2025-01-01
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| Online Access: | https://www.mdpi.com/2304-6732/12/1/49 |
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| author | Jamshad Bashir Muhammad Usman Dmitri Sergeevich Arteev Zoya Noor Ahmed Ali |
| author_facet | Jamshad Bashir Muhammad Usman Dmitri Sergeevich Arteev Zoya Noor Ahmed Ali |
| author_sort | Jamshad Bashir |
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| description | Ultraviolet light-emitting diodes (LEDs) based on Aluminum Gallium Nitride (AlGaN) suffer from poor carriers’ confinement effect, one possible solution to this problem is to increase the barrier heights for carriers by increasing Aluminum content in quantum barriers (QBs), which results in a higher turn-on voltage. Keeping this in mind, we have improved the carriers’ confinement by introducing a small amount of Boron nitride (BN) (2%) in ternary QBs and an electron injecting layer, which results in higher barriers that restrict the out-of-active region movement of electrons and holes. With quaternary B<sub>x</sub>Al<sub>y</sub>Ga<sub>z</sub>N QBs, significantly enhanced electrons and hole concentrations can be observed in the active region of quantum wells (QWs), which leads to a 4.3 times increased radiative recombination rate with a 68% better internal quantum efficiency (IQE) than the referenced conventional LEDs. Relying on the fairly improved IQE and radiative recombinations, other optoelectronic characteristics such as luminous power, emission intensity, etc., are also enhanced. Our whole analysis is based on numerical techniques but we believe that fabricating the proposed type of LEDs will result in desirable light extraction and external quantum efficiencies. |
| format | Article |
| id | doaj-art-d9151006773749a9a6146220799c595f |
| institution | Kabale University |
| issn | 2304-6732 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | MDPI AG |
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| series | Photonics |
| spelling | doaj-art-d9151006773749a9a6146220799c595f2025-01-24T13:46:19ZengMDPI AGPhotonics2304-67322025-01-011214910.3390/photonics12010049Enhancing Carriers’ Confinement by Introducing BAlGaN Quantum Barriers for the Better Optoelectronic Performance of Deep UV LEDsJamshad Bashir0Muhammad Usman1Dmitri Sergeevich Arteev2Zoya Noor3Ahmed Ali4Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi 23460, PakistanFaculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi 23460, PakistanIoffe Insitute, 26 Politekhnicheskaya, 194021 St. Petersburg, RussiaFaculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi 23460, PakistanDepartment of Biomedical Engineering, Yonsei University, Wonju 26493, Republic of KoreaUltraviolet light-emitting diodes (LEDs) based on Aluminum Gallium Nitride (AlGaN) suffer from poor carriers’ confinement effect, one possible solution to this problem is to increase the barrier heights for carriers by increasing Aluminum content in quantum barriers (QBs), which results in a higher turn-on voltage. Keeping this in mind, we have improved the carriers’ confinement by introducing a small amount of Boron nitride (BN) (2%) in ternary QBs and an electron injecting layer, which results in higher barriers that restrict the out-of-active region movement of electrons and holes. With quaternary B<sub>x</sub>Al<sub>y</sub>Ga<sub>z</sub>N QBs, significantly enhanced electrons and hole concentrations can be observed in the active region of quantum wells (QWs), which leads to a 4.3 times increased radiative recombination rate with a 68% better internal quantum efficiency (IQE) than the referenced conventional LEDs. Relying on the fairly improved IQE and radiative recombinations, other optoelectronic characteristics such as luminous power, emission intensity, etc., are also enhanced. Our whole analysis is based on numerical techniques but we believe that fabricating the proposed type of LEDs will result in desirable light extraction and external quantum efficiencies.https://www.mdpi.com/2304-6732/12/1/49boron nitrideband gapconfinementaffinity |
| spellingShingle | Jamshad Bashir Muhammad Usman Dmitri Sergeevich Arteev Zoya Noor Ahmed Ali Enhancing Carriers’ Confinement by Introducing BAlGaN Quantum Barriers for the Better Optoelectronic Performance of Deep UV LEDs Photonics boron nitride band gap confinement affinity |
| title | Enhancing Carriers’ Confinement by Introducing BAlGaN Quantum Barriers for the Better Optoelectronic Performance of Deep UV LEDs |
| title_full | Enhancing Carriers’ Confinement by Introducing BAlGaN Quantum Barriers for the Better Optoelectronic Performance of Deep UV LEDs |
| title_fullStr | Enhancing Carriers’ Confinement by Introducing BAlGaN Quantum Barriers for the Better Optoelectronic Performance of Deep UV LEDs |
| title_full_unstemmed | Enhancing Carriers’ Confinement by Introducing BAlGaN Quantum Barriers for the Better Optoelectronic Performance of Deep UV LEDs |
| title_short | Enhancing Carriers’ Confinement by Introducing BAlGaN Quantum Barriers for the Better Optoelectronic Performance of Deep UV LEDs |
| title_sort | enhancing carriers confinement by introducing balgan quantum barriers for the better optoelectronic performance of deep uv leds |
| topic | boron nitride band gap confinement affinity |
| url | https://www.mdpi.com/2304-6732/12/1/49 |
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