Enhancing Carriers’ Confinement by Introducing BAlGaN Quantum Barriers for the Better Optoelectronic Performance of Deep UV LEDs

Enhancing Carriers’ Confinement by Introducing BAlGaN Quantum Barriers for the Better Optoelectronic Performance of Deep UV LEDs

Ultraviolet light-emitting diodes (LEDs) based on Aluminum Gallium Nitride (AlGaN) suffer from poor carriers’ confinement effect, one possible solution to this problem is to increase the barrier heights for carriers by increasing Aluminum content in quantum barriers (QBs), which results in a higher...

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Bibliographic Details
Main Authors: Jamshad Bashir, Muhammad Usman, Dmitri Sergeevich Arteev, Zoya Noor, Ahmed Ali
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Photonics
Subjects:
boron nitride
band gap
confinement
affinity
Online Access:https://www.mdpi.com/2304-6732/12/1/49
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https://www.mdpi.com/2304-6732/12/1/49

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