Corrections to “Emergence of Negative Differential Resistance Through Hole Resonant Tunneling in GeSn/GeSiSn Double Barrier Structure”
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Online Access: | https://ieeexplore.ieee.org/document/10913980/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|