Electromigration failure induced by interdiffusion between Al trace and Cu seed layer in the immortal microbump in three-dimensional integrated circuit
Owing to ultrahigh current density and severe Joule heating, electromigration (EM) in the microbump is a crucial reliability issue in three-dimensional integrated circuit. In this study, we investigated a novel EM weak link in our 13 μm microbump after all of the solder transformed into intermetalli...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-05-01
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| Series: | Journal of Materials Research and Technology |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785425011196 |
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