Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si
Abstract The explosion of artificial intelligence, the possible end of Moore's law, dawn of quantum computing, and the continued exponential growth of data communications traffic have brought new urgency to the need for laser integration on the diversified Si platform. While diode lasers on gro...
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-02-01
|
| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202400580 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832542924229836800 |
|---|---|
| author | Trevor R. Smith Spencer McDermott Vatsalkumar Patel Ross Anthony Manu Hedge Sophie E. Bierer Sunzhuoran Wang Andrew P. Knights Ryan B. Lewis |
| author_facet | Trevor R. Smith Spencer McDermott Vatsalkumar Patel Ross Anthony Manu Hedge Sophie E. Bierer Sunzhuoran Wang Andrew P. Knights Ryan B. Lewis |
| author_sort | Trevor R. Smith |
| collection | DOAJ |
| description | Abstract The explosion of artificial intelligence, the possible end of Moore's law, dawn of quantum computing, and the continued exponential growth of data communications traffic have brought new urgency to the need for laser integration on the diversified Si platform. While diode lasers on group III‐V platforms have long‐powered internet data communications and other optoelectronic technologies, direct integration with Si remains problematic. A paradigm‐shifting solution requires exploring new and unconventional materials and integration approaches. In this work, it is shown that a sub‐10‐nm ultra‐thin Si1−xGex buffer layer fabricated by an oxidative solid‐phase epitaxy process can facilitate extraordinarily efficient strain relaxation. The Si1−xGex layer is formed by ion implanting Ge into Si(111) and selectively oxidizing Si atoms in the resulting ion‐damaged layer, precipitating a fully strain‐relaxed Ge‐rich layer between the Si substrate and surface oxide. The efficient strain relaxation results from the high oxidation temperature, producing a periodic network of dislocations at the substrate interface, coinciding with modulations of the Ge content in the Si1−xGex layer and indicating the presence of defect‐mediated diffusion of Si through the layer. The epitaxial growth of high‐quality GaAs is demonstrated on this ultra‐thin Si1−xGex layer, demonstrating a promising new pathway for integrating III‐V lasers directly on the Si platform. |
| format | Article |
| id | doaj-art-d63908d72a7b4eb4a37e019621b5626a |
| institution | Kabale University |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-d63908d72a7b4eb4a37e019621b5626a2025-02-03T13:24:06ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-02-01123n/an/a10.1002/admi.202400580Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on SiTrevor R. Smith0Spencer McDermott1Vatsalkumar Patel2Ross Anthony3Manu Hedge4Sophie E. Bierer5Sunzhuoran Wang6Andrew P. Knights7Ryan B. Lewis8Department of Engineering Physics McMaster University Hamilton L8S 4L7 CanadaDepartment of Engineering Physics McMaster University Hamilton L8S 4L7 CanadaDepartment of Engineering Physics McMaster University Hamilton L8S 4L7 CanadaDepartment of Engineering Physics McMaster University Hamilton L8S 4L7 CanadaDepartment of Engineering Physics McMaster University Hamilton L8S 4L7 CanadaDepartment of Engineering Physics McMaster University Hamilton L8S 4L7 CanadaDepartment of Engineering Physics McMaster University Hamilton L8S 4L7 CanadaDepartment of Engineering Physics McMaster University Hamilton L8S 4L7 CanadaDepartment of Engineering Physics McMaster University Hamilton L8S 4L7 CanadaAbstract The explosion of artificial intelligence, the possible end of Moore's law, dawn of quantum computing, and the continued exponential growth of data communications traffic have brought new urgency to the need for laser integration on the diversified Si platform. While diode lasers on group III‐V platforms have long‐powered internet data communications and other optoelectronic technologies, direct integration with Si remains problematic. A paradigm‐shifting solution requires exploring new and unconventional materials and integration approaches. In this work, it is shown that a sub‐10‐nm ultra‐thin Si1−xGex buffer layer fabricated by an oxidative solid‐phase epitaxy process can facilitate extraordinarily efficient strain relaxation. The Si1−xGex layer is formed by ion implanting Ge into Si(111) and selectively oxidizing Si atoms in the resulting ion‐damaged layer, precipitating a fully strain‐relaxed Ge‐rich layer between the Si substrate and surface oxide. The efficient strain relaxation results from the high oxidation temperature, producing a periodic network of dislocations at the substrate interface, coinciding with modulations of the Ge content in the Si1−xGex layer and indicating the presence of defect‐mediated diffusion of Si through the layer. The epitaxial growth of high‐quality GaAs is demonstrated on this ultra‐thin Si1−xGex layer, demonstrating a promising new pathway for integrating III‐V lasers directly on the Si platform.https://doi.org/10.1002/admi.202400580defect‐mediated diffusionGaAs‐on‐SiheteroepitaxyMOVPEsolid‐phase epitaxy |
| spellingShingle | Trevor R. Smith Spencer McDermott Vatsalkumar Patel Ross Anthony Manu Hedge Sophie E. Bierer Sunzhuoran Wang Andrew P. Knights Ryan B. Lewis Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si Advanced Materials Interfaces defect‐mediated diffusion GaAs‐on‐Si heteroepitaxy MOVPE solid‐phase epitaxy |
| title | Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si |
| title_full | Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si |
| title_fullStr | Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si |
| title_full_unstemmed | Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si |
| title_short | Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si |
| title_sort | ultra thin strain relieving si1 xgex layers enabling iii v epitaxy on si |
| topic | defect‐mediated diffusion GaAs‐on‐Si heteroepitaxy MOVPE solid‐phase epitaxy |
| url | https://doi.org/10.1002/admi.202400580 |
| work_keys_str_mv | AT trevorrsmith ultrathinstrainrelievingsi1xgexlayersenablingiiivepitaxyonsi AT spencermcdermott ultrathinstrainrelievingsi1xgexlayersenablingiiivepitaxyonsi AT vatsalkumarpatel ultrathinstrainrelievingsi1xgexlayersenablingiiivepitaxyonsi AT rossanthony ultrathinstrainrelievingsi1xgexlayersenablingiiivepitaxyonsi AT manuhedge ultrathinstrainrelievingsi1xgexlayersenablingiiivepitaxyonsi AT sophieebierer ultrathinstrainrelievingsi1xgexlayersenablingiiivepitaxyonsi AT sunzhuoranwang ultrathinstrainrelievingsi1xgexlayersenablingiiivepitaxyonsi AT andrewpknights ultrathinstrainrelievingsi1xgexlayersenablingiiivepitaxyonsi AT ryanblewis ultrathinstrainrelievingsi1xgexlayersenablingiiivepitaxyonsi |