Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si

Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si

Abstract The explosion of artificial intelligence, the possible end of Moore's law, dawn of quantum computing, and the continued exponential growth of data communications traffic have brought new urgency to the need for laser integration on the diversified Si platform. While diode lasers on gro...

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Bibliographic Details
Main Authors: Trevor R. Smith, Spencer McDermott, Vatsalkumar Patel, Ross Anthony, Manu Hedge, Sophie E. Bierer, Sunzhuoran Wang, Andrew P. Knights, Ryan B. Lewis
Format: Article
Language:English
Published: Wiley-VCH 2025-02-01
Series:Advanced Materials Interfaces
Subjects:
defect‐mediated diffusion
GaAs‐on‐Si
heteroepitaxy
MOVPE
solid‐phase epitaxy
Online Access:https://doi.org/10.1002/admi.202400580
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https://doi.org/10.1002/admi.202400580

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