Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth
Presented work focuses the attention on two regions of MOS structure placed in the vicinity of the semiconductor/dielectric interface, in particular: on part of dielectric layer and thin layer of the substrate. In the presented work the application of absorption as a tool that can vary the absorptio...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2016-01-01
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| Series: | Journal of Spectroscopy |
| Online Access: | http://dx.doi.org/10.1155/2016/1617063 |
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