Investigation on the high temperature behaviour of p-GaN HEMTs by different temperature sensitive electrical parameters
Due to recent improvements and technical advantages in applications with high switching frequencies, research is increasingly focusing on GaN high electron mobility transistors (HEMTs). An accurate temperature determination is thereby of particular importance to give precise lifetime estimations and...
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| Format: | Article |
| Language: | English |
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Elsevier
2025-12-01
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| Series: | Power Electronic Devices and Components |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370425000288 |
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| _version_ | 1849715913568288768 |
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| author | Lukas Hein Maximilian Goller Gengqi Li Marius Lößner Josef Lutz Thomas Basler |
| author_facet | Lukas Hein Maximilian Goller Gengqi Li Marius Lößner Josef Lutz Thomas Basler |
| author_sort | Lukas Hein |
| collection | DOAJ |
| description | Due to recent improvements and technical advantages in applications with high switching frequencies, research is increasingly focusing on GaN high electron mobility transistors (HEMTs). An accurate temperature determination is thereby of particular importance to give precise lifetime estimations and define safe operation areas. This work investigates on the temperature estimation by means of the temperature sensitive electrical parameters (TSEPs) RDS,on (T) and VGS (T) of GIT-type transistors, supported by an IR-camera. Several Zth characteristics were measured, whereby the temperature estimation with VGS (T) appears to be superior. Furthermore, the investigation includes static and dynamic characterization as well as power cycling tests (PCT) with switching losses at high temperature above the datasheet limit of 150°C. The device operates stable and reliable at a junction temperature of 175°C in the PCT. |
| format | Article |
| id | doaj-art-d5ef10b174a3424c8df82839d11bfa83 |
| institution | DOAJ |
| issn | 2772-3704 |
| language | English |
| publishDate | 2025-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Power Electronic Devices and Components |
| spelling | doaj-art-d5ef10b174a3424c8df82839d11bfa832025-08-20T03:13:11ZengElsevierPower Electronic Devices and Components2772-37042025-12-011210010310.1016/j.pedc.2025.100103Investigation on the high temperature behaviour of p-GaN HEMTs by different temperature sensitive electrical parametersLukas Hein0Maximilian Goller1Gengqi Li2Marius Lößner3Josef Lutz4Thomas Basler5Corresponding author.; Chair of Power Electronics, Chemnitz University of Technology, Reichenhainer Straße 70, 09126 Chemnitz, GermanyChair of Power Electronics, Chemnitz University of Technology, Reichenhainer Straße 70, 09126 Chemnitz, GermanyChair of Power Electronics, Chemnitz University of Technology, Reichenhainer Straße 70, 09126 Chemnitz, GermanyChair of Power Electronics, Chemnitz University of Technology, Reichenhainer Straße 70, 09126 Chemnitz, GermanyChair of Power Electronics, Chemnitz University of Technology, Reichenhainer Straße 70, 09126 Chemnitz, GermanyChair of Power Electronics, Chemnitz University of Technology, Reichenhainer Straße 70, 09126 Chemnitz, GermanyDue to recent improvements and technical advantages in applications with high switching frequencies, research is increasingly focusing on GaN high electron mobility transistors (HEMTs). An accurate temperature determination is thereby of particular importance to give precise lifetime estimations and define safe operation areas. This work investigates on the temperature estimation by means of the temperature sensitive electrical parameters (TSEPs) RDS,on (T) and VGS (T) of GIT-type transistors, supported by an IR-camera. Several Zth characteristics were measured, whereby the temperature estimation with VGS (T) appears to be superior. Furthermore, the investigation includes static and dynamic characterization as well as power cycling tests (PCT) with switching losses at high temperature above the datasheet limit of 150°C. The device operates stable and reliable at a junction temperature of 175°C in the PCT.http://www.sciencedirect.com/science/article/pii/S2772370425000288None |
| spellingShingle | Lukas Hein Maximilian Goller Gengqi Li Marius Lößner Josef Lutz Thomas Basler Investigation on the high temperature behaviour of p-GaN HEMTs by different temperature sensitive electrical parameters Power Electronic Devices and Components None |
| title | Investigation on the high temperature behaviour of p-GaN HEMTs by different temperature sensitive electrical parameters |
| title_full | Investigation on the high temperature behaviour of p-GaN HEMTs by different temperature sensitive electrical parameters |
| title_fullStr | Investigation on the high temperature behaviour of p-GaN HEMTs by different temperature sensitive electrical parameters |
| title_full_unstemmed | Investigation on the high temperature behaviour of p-GaN HEMTs by different temperature sensitive electrical parameters |
| title_short | Investigation on the high temperature behaviour of p-GaN HEMTs by different temperature sensitive electrical parameters |
| title_sort | investigation on the high temperature behaviour of p gan hemts by different temperature sensitive electrical parameters |
| topic | None |
| url | http://www.sciencedirect.com/science/article/pii/S2772370425000288 |
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