Investigation on the high temperature behaviour of p-GaN HEMTs by different temperature sensitive electrical parameters
Due to recent improvements and technical advantages in applications with high switching frequencies, research is increasingly focusing on GaN high electron mobility transistors (HEMTs). An accurate temperature determination is thereby of particular importance to give precise lifetime estimations and...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-12-01
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| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370425000288 |
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