RESEARCH ON SiC FOR INTERFACE QUALITY
A new thermal oxidation process of growing a dry oxide then following with a wet re-oxidationanneal produces an oxide with the dielectric strength of a dry oxide and the high-quality interface of a wetoxide. MIS field effect transistors (MISFET’s) with a ONO gate insulator had surface channel mobili...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Academica Brancusi
2013-05-01
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| Series: | Fiabilitate şi Durabilitate |
| Subjects: | |
| Online Access: | http://www.utgjiu.ro/rev_mec/mecanica/pdf/2013-01.Supliment/20_Cristiana%20Voican,%20Constantin%20Stanescu1.pdf |
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