Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress
Devices under semi-on-state stress often suffer from more severe current collapse than when they are in the off-state, which causes an increase in dynamic on-resistance. Therefore, characterization of the trap states is necessary. In this study, temperature-dependent transient recovery current analy...
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2024-09-01
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| author | Ye Liang Jiachen Duan Ping Zhang Kain Lu Low Jie Zhang Wen Liu |
| author_facet | Ye Liang Jiachen Duan Ping Zhang Kain Lu Low Jie Zhang Wen Liu |
| author_sort | Ye Liang |
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| description | Devices under semi-on-state stress often suffer from more severe current collapse than when they are in the off-state, which causes an increase in dynamic on-resistance. Therefore, characterization of the trap states is necessary. In this study, temperature-dependent transient recovery current analysis determined a trap energy level of 0.08 eV under semi-on-state stress, implying that interface traps are responsible for current collapse. Multi-frequency capacitance–voltage (C-V) testing was performed on the MIS diode, calculating that interface trap density is in the range of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>1.37</mn><mo>×</mo><msup><mn>10</mn><mn>13</mn></msup></mrow></semantics></math></inline-formula> to <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>6.07</mn><mo>×</mo><msup><mn>10</mn><mn>12</mn></msup></mrow></semantics></math></inline-formula><inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mi>cm</mi><mrow><mo>−</mo><mn>2</mn></mrow></msup></semantics></math></inline-formula><inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mi>eV</mi><mrow><mo>−</mo><mn>1</mn></mrow></msup></semantics></math></inline-formula> from <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>E</mi><mi>C</mi></msub><mo>−</mo><msub><mi>E</mi><mi>T</mi></msub><mo>=</mo><mn>0.29</mn></mrow></semantics></math></inline-formula> eV to 0.45 eV. |
| format | Article |
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| institution | OA Journals |
| issn | 2079-4991 |
| language | English |
| publishDate | 2024-09-01 |
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| spelling | doaj-art-d4346325ddf846e1a5a0cc9c223ab5d62025-08-20T01:55:45ZengMDPI AGNanomaterials2079-49912024-09-011418152910.3390/nano14181529Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State StressYe Liang0Jiachen Duan1Ping Zhang2Kain Lu Low3Jie Zhang4Wen Liu5School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou 215123, ChinaSchool of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou 215123, ChinaDepartment of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UKSchool of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou 215123, ChinaDepartment of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UKSchool of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou 215123, ChinaDevices under semi-on-state stress often suffer from more severe current collapse than when they are in the off-state, which causes an increase in dynamic on-resistance. Therefore, characterization of the trap states is necessary. In this study, temperature-dependent transient recovery current analysis determined a trap energy level of 0.08 eV under semi-on-state stress, implying that interface traps are responsible for current collapse. Multi-frequency capacitance–voltage (C-V) testing was performed on the MIS diode, calculating that interface trap density is in the range of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>1.37</mn><mo>×</mo><msup><mn>10</mn><mn>13</mn></msup></mrow></semantics></math></inline-formula> to <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>6.07</mn><mo>×</mo><msup><mn>10</mn><mn>12</mn></msup></mrow></semantics></math></inline-formula><inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mi>cm</mi><mrow><mo>−</mo><mn>2</mn></mrow></msup></semantics></math></inline-formula><inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mi>eV</mi><mrow><mo>−</mo><mn>1</mn></mrow></msup></semantics></math></inline-formula> from <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>E</mi><mi>C</mi></msub><mo>−</mo><msub><mi>E</mi><mi>T</mi></msub><mo>=</mo><mn>0.29</mn></mrow></semantics></math></inline-formula> eV to 0.45 eV.https://www.mdpi.com/2079-4991/14/18/1529AlGaN/GaN MIS-HEMTcurrent collapsetrap statesenergy leveltrap density |
| spellingShingle | Ye Liang Jiachen Duan Ping Zhang Kain Lu Low Jie Zhang Wen Liu Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress Nanomaterials AlGaN/GaN MIS-HEMT current collapse trap states energy level trap density |
| title | Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress |
| title_full | Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress |
| title_fullStr | Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress |
| title_full_unstemmed | Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress |
| title_short | Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress |
| title_sort | characterization of trap states in algan gan mis high electron mobility transistors under semi on state stress |
| topic | AlGaN/GaN MIS-HEMT current collapse trap states energy level trap density |
| url | https://www.mdpi.com/2079-4991/14/18/1529 |
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