Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

Devices under semi-on-state stress often suffer from more severe current collapse than when they are in the off-state, which causes an increase in dynamic on-resistance. Therefore, characterization of the trap states is necessary. In this study, temperature-dependent transient recovery current analy...

Full description

Saved in:
Bibliographic Details
Main Authors: Ye Liang, Jiachen Duan, Ping Zhang, Kain Lu Low, Jie Zhang, Wen Liu
Format: Article
Language:English
Published: MDPI AG 2024-09-01
Series:Nanomaterials
Subjects:
AlGaN/GaN MIS-HEMT
current collapse
trap states
energy level
trap density
Online Access:https://www.mdpi.com/2079-4991/14/18/1529
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://www.mdpi.com/2079-4991/14/18/1529

Similar Items