Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

Devices under semi-on-state stress often suffer from more severe current collapse than when they are in the off-state, which causes an increase in dynamic on-resistance. Therefore, characterization of the trap states is necessary. In this study, temperature-dependent transient recovery current analy...

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Bibliographic Details
Main Authors: Ye Liang, Jiachen Duan, Ping Zhang, Kain Lu Low, Jie Zhang, Wen Liu
Format: Article
Language:English
Published: MDPI AG 2024-09-01
Series:Nanomaterials
Subjects:
AlGaN/GaN MIS-HEMT
current collapse
trap states
energy level
trap density
Online Access:https://www.mdpi.com/2079-4991/14/18/1529
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Summary:Devices under semi-on-state stress often suffer from more severe current collapse than when they are in the off-state, which causes an increase in dynamic on-resistance. Therefore, characterization of the trap states is necessary. In this study, temperature-dependent transient recovery current analysis determined a trap energy level of 0.08 eV under semi-on-state stress, implying that interface traps are responsible for current collapse. Multi-frequency capacitance–voltage (C-V) testing was performed on the MIS diode, calculating that interface trap density is in the range of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>1.37</mn><mo>×</mo><msup><mn>10</mn><mn>13</mn></msup></mrow></semantics></math></inline-formula> to <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>6.07</mn><mo>×</mo><msup><mn>10</mn><mn>12</mn></msup></mrow></semantics></math></inline-formula><inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mi>cm</mi><mrow><mo>−</mo><mn>2</mn></mrow></msup></semantics></math></inline-formula><inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mi>eV</mi><mrow><mo>−</mo><mn>1</mn></mrow></msup></semantics></math></inline-formula> from <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>E</mi><mi>C</mi></msub><mo>−</mo><msub><mi>E</mi><mi>T</mi></msub><mo>=</mo><mn>0.29</mn></mrow></semantics></math></inline-formula> eV to 0.45 eV.
ISSN:2079-4991

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