In Situ Manipulation of Growth Mechanisms in the Vapor–Solid–Solid Growth of GaP Nanowires
Abstract Vapor–solid–solid (VSS) growth of III‐V semiconductor nanowires (NWs) has long been considered an alternative for the vapor–liquid–solid (VLS) growth mode, with the potential to avoid the incorporation of deep‐level impurities into semiconductors and to form compositionally abrupt interface...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-06-01
|
| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202400805 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850215466725801984 |
|---|---|
| author | Tianyi Hu Yuanyuan Cao Sara M. Franzén Daniel Jacobsson Michael S. Seifner Maria E. Messing Kimberly A. Dick |
| author_facet | Tianyi Hu Yuanyuan Cao Sara M. Franzén Daniel Jacobsson Michael S. Seifner Maria E. Messing Kimberly A. Dick |
| author_sort | Tianyi Hu |
| collection | DOAJ |
| description | Abstract Vapor–solid–solid (VSS) growth of III‐V semiconductor nanowires (NWs) has long been considered an alternative for the vapor–liquid–solid (VLS) growth mode, with the potential to avoid the incorporation of deep‐level impurities into semiconductors and to form compositionally abrupt interfaces. Most research however indicates that VSS growth has a much lower growth rate than observed in the VLS growth regime, explained by the very slow mass transport at the solid seed particle‐NW interface. In this study, the direct observation of the VSS growth of GaP NWs under different mechanisms is reported, by using Ni as a seed material inside an environmental transmission electron microscope. These results reveal that when NWs are grown from seed particles exhibiting the NiGa and Ni2Ga3 phases, classic VSS growth occurs with slow NW growth and interface diffusion as the dominant mass transport pathway. In contrast, when NWs are grown by seed particles containing Ni2P phase, rapid NW growth is observed together with a continuous reshaping of the seed particle. A cation exchange reaction is proposed as the predominant growth mechanism. This research results demonstrate an entirely new variant of the VSS growth mode, opening up new degrees of freedom for tuning NW properties. |
| format | Article |
| id | doaj-art-d38e9d2da35440eab28b3fd61551d147 |
| institution | OA Journals |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-d38e9d2da35440eab28b3fd61551d1472025-08-20T02:08:36ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-06-011211n/an/a10.1002/admi.202400805In Situ Manipulation of Growth Mechanisms in the Vapor–Solid–Solid Growth of GaP NanowiresTianyi Hu0Yuanyuan Cao1Sara M. Franzén2Daniel Jacobsson3Michael S. Seifner4Maria E. Messing5Kimberly A. Dick6Centre for Analysis and Synthesis Lund University Box 124 Lund 22100 SwedenCentre for Analysis and Synthesis Lund University Box 124 Lund 22100 SwedenNanoLund Lund University Box 118 Lund 22100 SwedenCentre for Analysis and Synthesis Lund University Box 124 Lund 22100 SwedenCentre for Analysis and Synthesis Lund University Box 124 Lund 22100 SwedenNanoLund Lund University Box 118 Lund 22100 SwedenCentre for Analysis and Synthesis Lund University Box 124 Lund 22100 SwedenAbstract Vapor–solid–solid (VSS) growth of III‐V semiconductor nanowires (NWs) has long been considered an alternative for the vapor–liquid–solid (VLS) growth mode, with the potential to avoid the incorporation of deep‐level impurities into semiconductors and to form compositionally abrupt interfaces. Most research however indicates that VSS growth has a much lower growth rate than observed in the VLS growth regime, explained by the very slow mass transport at the solid seed particle‐NW interface. In this study, the direct observation of the VSS growth of GaP NWs under different mechanisms is reported, by using Ni as a seed material inside an environmental transmission electron microscope. These results reveal that when NWs are grown from seed particles exhibiting the NiGa and Ni2Ga3 phases, classic VSS growth occurs with slow NW growth and interface diffusion as the dominant mass transport pathway. In contrast, when NWs are grown by seed particles containing Ni2P phase, rapid NW growth is observed together with a continuous reshaping of the seed particle. A cation exchange reaction is proposed as the predominant growth mechanism. This research results demonstrate an entirely new variant of the VSS growth mode, opening up new degrees of freedom for tuning NW properties.https://doi.org/10.1002/admi.202400805cation exchange reactionGaP nanowiresin situ TEMNi nanoparticlesphase transformationvapor–solid–solid mechanism |
| spellingShingle | Tianyi Hu Yuanyuan Cao Sara M. Franzén Daniel Jacobsson Michael S. Seifner Maria E. Messing Kimberly A. Dick In Situ Manipulation of Growth Mechanisms in the Vapor–Solid–Solid Growth of GaP Nanowires Advanced Materials Interfaces cation exchange reaction GaP nanowires in situ TEM Ni nanoparticles phase transformation vapor–solid–solid mechanism |
| title | In Situ Manipulation of Growth Mechanisms in the Vapor–Solid–Solid Growth of GaP Nanowires |
| title_full | In Situ Manipulation of Growth Mechanisms in the Vapor–Solid–Solid Growth of GaP Nanowires |
| title_fullStr | In Situ Manipulation of Growth Mechanisms in the Vapor–Solid–Solid Growth of GaP Nanowires |
| title_full_unstemmed | In Situ Manipulation of Growth Mechanisms in the Vapor–Solid–Solid Growth of GaP Nanowires |
| title_short | In Situ Manipulation of Growth Mechanisms in the Vapor–Solid–Solid Growth of GaP Nanowires |
| title_sort | in situ manipulation of growth mechanisms in the vapor solid solid growth of gap nanowires |
| topic | cation exchange reaction GaP nanowires in situ TEM Ni nanoparticles phase transformation vapor–solid–solid mechanism |
| url | https://doi.org/10.1002/admi.202400805 |
| work_keys_str_mv | AT tianyihu insitumanipulationofgrowthmechanismsinthevaporsolidsolidgrowthofgapnanowires AT yuanyuancao insitumanipulationofgrowthmechanismsinthevaporsolidsolidgrowthofgapnanowires AT saramfranzen insitumanipulationofgrowthmechanismsinthevaporsolidsolidgrowthofgapnanowires AT danieljacobsson insitumanipulationofgrowthmechanismsinthevaporsolidsolidgrowthofgapnanowires AT michaelsseifner insitumanipulationofgrowthmechanismsinthevaporsolidsolidgrowthofgapnanowires AT mariaemessing insitumanipulationofgrowthmechanismsinthevaporsolidsolidgrowthofgapnanowires AT kimberlyadick insitumanipulationofgrowthmechanismsinthevaporsolidsolidgrowthofgapnanowires |