In Situ Manipulation of Growth Mechanisms in the Vapor–Solid–Solid Growth of GaP Nanowires

In Situ Manipulation of Growth Mechanisms in the Vapor–Solid–Solid Growth of GaP Nanowires

Abstract Vapor–solid–solid (VSS) growth of III‐V semiconductor nanowires (NWs) has long been considered an alternative for the vapor–liquid–solid (VLS) growth mode, with the potential to avoid the incorporation of deep‐level impurities into semiconductors and to form compositionally abrupt interface...

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Bibliographic Details
Main Authors: Tianyi Hu, Yuanyuan Cao, Sara M. Franzén, Daniel Jacobsson, Michael S. Seifner, Maria E. Messing, Kimberly A. Dick
Format: Article
Language:English
Published: Wiley-VCH 2025-06-01
Series:Advanced Materials Interfaces
Subjects:
cation exchange reaction
GaP nanowires
in situ TEM
Ni nanoparticles
phase transformation
vapor–solid–solid mechanism
Online Access:https://doi.org/10.1002/admi.202400805
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https://doi.org/10.1002/admi.202400805

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