Impact of the Interruption Duration on Photoluminescence Properties of MOCVD-Grown GaAsP/InAlGaAs Quantum Well Structures

Impact of the Interruption Duration on Photoluminescence Properties of MOCVD-Grown GaAsP/InAlGaAs Quantum Well Structures

The growth interruption technology is introduced to the growth of GaAsP/InAlGaAs quantum well (QW) structure using metal–organic chemical vapor deposition (MOCVD). The effect of growth interruption time (GIT) on the crystalline quality and optical properties are investigated. The two distinctive emi...

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Bibliographic Details
Main Authors: Bin Wang, Yugang Zeng, Xuezhe Yu, Weijie Gao, Wei Chen, Haoyu Shen, Li Qin, Yongqiang Ning, Lijun Wang
Format: Article
Language:English
Published: MDPI AG 2024-09-01
Series:Nanomaterials
Subjects:
metal–organic chemical vapor deposition
tensile-strained quantum well
GaAsP/InAlGaAs heterostructure
growth interruption time
temperature-dependent photoluminescence
Online Access:https://www.mdpi.com/2079-4991/14/18/1469
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