Telecom O-Band Quantum Dots Fabricated by Droplet Etching

Telecom O-Band Quantum Dots Fabricated by Droplet Etching

We present a novel growth technique for fabricating low-density InAs/GaAs quantum dots that emit in the telecom O-band. This method combines local droplet etching on GaAs surfaces using gallium with Stranski–Krastanov growth initiated by InAs deposition. Quantum dots nucleate directly within nanohol...

Full description

Saved in:
Bibliographic Details
Main Authors: Nikolai Spitzer, Elias Kersting, Meret Grell, Danial Kohminaei, Marcel Schmidt, Nikolai Bart, Andreas D. Wieck, Arne Ludwig
Format: Article
Language:English
Published: MDPI AG 2024-11-01
Series:Crystals
Subjects:
molecular beam epitaxy
quantum dots
local droplet etching
telecom O-band
photoluminescence spectroscopy
atomic force microscopy
Online Access:https://www.mdpi.com/2073-4352/14/12/1014
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://www.mdpi.com/2073-4352/14/12/1014

Similar Items