Optical and electrical properties of proton-implanted p-GaSb for electrical isolation
The effect of proton implantation as isolation implant and subsequent annealing on the optical absorption and electrical resistivity of low-bandgap p -GaSb is reported. The measured transmittance spectra indicates that implantation creates a distribution of energy levels extending into the bandgap....
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2024-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/ad9377 |
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