Optical and electrical properties of proton-implanted p-GaSb for electrical isolation

Optical and electrical properties of proton-implanted p-GaSb for electrical isolation

The effect of proton implantation as isolation implant and subsequent annealing on the optical absorption and electrical resistivity of low-bandgap p -GaSb is reported. The measured transmittance spectra indicates that implantation creates a distribution of energy levels extending into the bandgap....

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Bibliographic Details
Main Authors: Sk Shafaat Saud Nikor, Md Saiful Islam Sumon, Shrivatch Sankar, Like Ma, Victor J. Patel, Samuel D. Hawkins, Sadhvikas J. Addamane, Shamsul Arafin
Format: Article
Language:English
Published: IOP Publishing 2024-01-01
Series:Applied Physics Express
Subjects:
ion implantation
implant isolation
rapid thermal annealing
gallium antimonide
spectroscopy
Online Access:https://doi.org/10.35848/1882-0786/ad9377
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https://doi.org/10.35848/1882-0786/ad9377

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