p-Type Transparent NiO Thin Films By e-Beam Evaporation Techniques
Nickel oxide (NiO) semiconductors thin films were prepared by e-beam evaporation technique at different substrate temperatures ranging from room temperature to 400 °C on glass substrate. Glancing incident X-ray diffraction depict that with the increases in substrate temperature the preferred orienta...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%202/articles/jnep_2011_V3_N1(Part2)_376-382.pdf |
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