Structural and Transport Properties of Thin InAs Layers Grown on In<sub>x</sub>Al<sub>1−x</sub>As Metamorphic Buffers
Indium Arsenide is a III–V semiconductor with low electron effective mass, a small band gap, strong spin–orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devi...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-01-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/3/173 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850067967319998464 |
|---|---|
| author | Giulio Senesi Katarzyna Skibinska Alessandro Paghi Gaurav Shukla Francesco Giazotto Fabio Beltram Stefan Heun Lucia Sorba |
| author_facet | Giulio Senesi Katarzyna Skibinska Alessandro Paghi Gaurav Shukla Francesco Giazotto Fabio Beltram Stefan Heun Lucia Sorba |
| author_sort | Giulio Senesi |
| collection | DOAJ |
| description | Indium Arsenide is a III–V semiconductor with low electron effective mass, a small band gap, strong spin–orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devices. Here, we report the epitaxial growth of very thin InAs layers with thicknesses ranging from 12.5 nm to 500 nm grown by Molecular Beam Epitaxy on In<sub>x</sub>Al<sub>1−x</sub>As metamorphic buffers. Differently than InAs substrates, these buffers have the advantage of being insulating at cryogenic temperatures, which allows for multiple device operations on the same wafer and thus making the approach scalable. The structural properties of the InAs layers were investigated by high-resolution X-ray diffraction, demonstrating the high crystal quality of the InAs layers. Furthermore, their transport properties, such as total and sheet carrier concentration, sheet resistance, and carrier mobility, were measured in the van der Pauw configuration at room temperature. A simple conduction model was employed to quantify the surface, bulk, and interface contributions to the overall carrier concentration and mobility. |
| format | Article |
| id | doaj-art-d15964d4c970457ca4ba4b737a3b8906 |
| institution | DOAJ |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj-art-d15964d4c970457ca4ba4b737a3b89062025-08-20T02:48:10ZengMDPI AGNanomaterials2079-49912025-01-0115317310.3390/nano15030173Structural and Transport Properties of Thin InAs Layers Grown on In<sub>x</sub>Al<sub>1−x</sub>As Metamorphic BuffersGiulio Senesi0Katarzyna Skibinska1Alessandro Paghi2Gaurav Shukla3Francesco Giazotto4Fabio Beltram5Stefan Heun6Lucia Sorba7Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, ItalyIstituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, ItalyIstituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, ItalyIstituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, ItalyIstituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, ItalyIstituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, ItalyIstituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, ItalyIstituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, ItalyIndium Arsenide is a III–V semiconductor with low electron effective mass, a small band gap, strong spin–orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devices. Here, we report the epitaxial growth of very thin InAs layers with thicknesses ranging from 12.5 nm to 500 nm grown by Molecular Beam Epitaxy on In<sub>x</sub>Al<sub>1−x</sub>As metamorphic buffers. Differently than InAs substrates, these buffers have the advantage of being insulating at cryogenic temperatures, which allows for multiple device operations on the same wafer and thus making the approach scalable. The structural properties of the InAs layers were investigated by high-resolution X-ray diffraction, demonstrating the high crystal quality of the InAs layers. Furthermore, their transport properties, such as total and sheet carrier concentration, sheet resistance, and carrier mobility, were measured in the van der Pauw configuration at room temperature. A simple conduction model was employed to quantify the surface, bulk, and interface contributions to the overall carrier concentration and mobility.https://www.mdpi.com/2079-4991/15/3/173InAsmolecular beam epitaxymetamorphic buffersstrainsemiconductorsIII–V materials |
| spellingShingle | Giulio Senesi Katarzyna Skibinska Alessandro Paghi Gaurav Shukla Francesco Giazotto Fabio Beltram Stefan Heun Lucia Sorba Structural and Transport Properties of Thin InAs Layers Grown on In<sub>x</sub>Al<sub>1−x</sub>As Metamorphic Buffers Nanomaterials InAs molecular beam epitaxy metamorphic buffers strain semiconductors III–V materials |
| title | Structural and Transport Properties of Thin InAs Layers Grown on In<sub>x</sub>Al<sub>1−x</sub>As Metamorphic Buffers |
| title_full | Structural and Transport Properties of Thin InAs Layers Grown on In<sub>x</sub>Al<sub>1−x</sub>As Metamorphic Buffers |
| title_fullStr | Structural and Transport Properties of Thin InAs Layers Grown on In<sub>x</sub>Al<sub>1−x</sub>As Metamorphic Buffers |
| title_full_unstemmed | Structural and Transport Properties of Thin InAs Layers Grown on In<sub>x</sub>Al<sub>1−x</sub>As Metamorphic Buffers |
| title_short | Structural and Transport Properties of Thin InAs Layers Grown on In<sub>x</sub>Al<sub>1−x</sub>As Metamorphic Buffers |
| title_sort | structural and transport properties of thin inas layers grown on in sub x sub al sub 1 x sub as metamorphic buffers |
| topic | InAs molecular beam epitaxy metamorphic buffers strain semiconductors III–V materials |
| url | https://www.mdpi.com/2079-4991/15/3/173 |
| work_keys_str_mv | AT giuliosenesi structuralandtransportpropertiesofthininaslayersgrownoninsubxsubalsub1xsubasmetamorphicbuffers AT katarzynaskibinska structuralandtransportpropertiesofthininaslayersgrownoninsubxsubalsub1xsubasmetamorphicbuffers AT alessandropaghi structuralandtransportpropertiesofthininaslayersgrownoninsubxsubalsub1xsubasmetamorphicbuffers AT gauravshukla structuralandtransportpropertiesofthininaslayersgrownoninsubxsubalsub1xsubasmetamorphicbuffers AT francescogiazotto structuralandtransportpropertiesofthininaslayersgrownoninsubxsubalsub1xsubasmetamorphicbuffers AT fabiobeltram structuralandtransportpropertiesofthininaslayersgrownoninsubxsubalsub1xsubasmetamorphicbuffers AT stefanheun structuralandtransportpropertiesofthininaslayersgrownoninsubxsubalsub1xsubasmetamorphicbuffers AT luciasorba structuralandtransportpropertiesofthininaslayersgrownoninsubxsubalsub1xsubasmetamorphicbuffers |