Structural and Transport Properties of Thin InAs Layers Grown on In<sub>x</sub>Al<sub>1−x</sub>As Metamorphic Buffers

Structural and Transport Properties of Thin InAs Layers Grown on In<sub>x</sub>Al<sub>1−x</sub>As Metamorphic Buffers

Indium Arsenide is a III–V semiconductor with low electron effective mass, a small band gap, strong spin–orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devi...

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Bibliographic Details
Main Authors: Giulio Senesi, Katarzyna Skibinska, Alessandro Paghi, Gaurav Shukla, Francesco Giazotto, Fabio Beltram, Stefan Heun, Lucia Sorba
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Nanomaterials
Subjects:
InAs
molecular beam epitaxy
metamorphic buffers
strain
semiconductors
III–V materials
Online Access:https://www.mdpi.com/2079-4991/15/3/173
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