A read voltage dependent synaptic characteristics of sub-threshold thin film transistors with a hf doped ZnO active layer
Abstract We present a quantitative analysis of synaptic characteristics dependent on a read voltage (Vread) of a sub-threshold operating Hf-ZnO synaptic thin-film transistor (Syn-TFT). As an higher case with Vread = 2.3 V near the threshold voltage (VT), the output current is depressed with applying...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-04-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-025-96187-0 |
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