In-situ fabrication of GaN/short-range ordered BN heterostructure light-emitting diodes
Abstract We fabricated GaN/BN double heterostructure light-emitting diodes (LEDs) where the BN layer exhibited an amorphous-like short-range order and facilitated the in-situ epitaxial lateral overgrowth (ELOG) of GaN films. Using an identical metal-organic chemical vapor deposition, the BN layer wa...
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| Format: | Article |
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Nature Portfolio
2025-03-01
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| Series: | NPG Asia Materials |
| Online Access: | https://doi.org/10.1038/s41427-025-00594-8 |
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| author | Heesoo Kim Anh Thi Dieu Nguyen Beomjun Kim Hyerin Jo Imasda Rahmatulloh Hyobin Yoo Hongseok Oh Aziz Ahmed Hyeonjun Beak Kunook Chung |
| author_facet | Heesoo Kim Anh Thi Dieu Nguyen Beomjun Kim Hyerin Jo Imasda Rahmatulloh Hyobin Yoo Hongseok Oh Aziz Ahmed Hyeonjun Beak Kunook Chung |
| author_sort | Heesoo Kim |
| collection | DOAJ |
| description | Abstract We fabricated GaN/BN double heterostructure light-emitting diodes (LEDs) where the BN layer exhibited an amorphous-like short-range order and facilitated the in-situ epitaxial lateral overgrowth (ELOG) of GaN films. Using an identical metal-organic chemical vapor deposition, the BN layer was reliably formed on the GaN film and then served as a growth mask during the high-temperature growth of the GaN overlayer. The BN layers were well dispersed over the entire surface with a partial coverage of 40–60% and a thickness of a few nm. The laterally overgrown GaN was epitaxially related to the initial GaN film exhibiting single crystallinity with flat and smooth surface morphology. Meanwhile, the in-situ-formed BN layer effectively blocked the threading dislocations where its density reductions were comparable to those of typical ex-situ ELOG processes. Furthermore, the BN-assisted ELOG reduced the mosaic of the practical single crystalline GaN grains and drastically improved crystallographic alignment and internal quantum efficiency. More importantly, the BN-assisted ELOG yielded high device performance of the GaN LEDs demonstrating that the benefits of ELOG were fully achieved with the fast and instant fabrication process. |
| format | Article |
| id | doaj-art-cecab1d1ded54d80b947916e20d51dcf |
| institution | DOAJ |
| issn | 1884-4057 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | NPG Asia Materials |
| spelling | doaj-art-cecab1d1ded54d80b947916e20d51dcf2025-08-20T02:49:25ZengNature PortfolioNPG Asia Materials1884-40572025-03-0117111010.1038/s41427-025-00594-8In-situ fabrication of GaN/short-range ordered BN heterostructure light-emitting diodesHeesoo Kim0Anh Thi Dieu Nguyen1Beomjun Kim2Hyerin Jo3Imasda Rahmatulloh4Hyobin Yoo5Hongseok Oh6Aziz Ahmed7Hyeonjun Beak8Kunook Chung9Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST)Department of Physics, Ulsan National Institute of Science and Technology (UNIST)Department of Physics, Sogang UniversityDepartment of Physics, Soongsil UniversityDepartment of Physics, Ulsan National Institute of Science and Technology (UNIST)Department of Materials Science and Engineering, Seoul National UniversityDepartment of Physics, Soongsil UniversityResearch Center for Novel Epitaxial Quantum Architectures, Seoul National UniversityDepartment of Physics, Sogang UniversityGraduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST)Abstract We fabricated GaN/BN double heterostructure light-emitting diodes (LEDs) where the BN layer exhibited an amorphous-like short-range order and facilitated the in-situ epitaxial lateral overgrowth (ELOG) of GaN films. Using an identical metal-organic chemical vapor deposition, the BN layer was reliably formed on the GaN film and then served as a growth mask during the high-temperature growth of the GaN overlayer. The BN layers were well dispersed over the entire surface with a partial coverage of 40–60% and a thickness of a few nm. The laterally overgrown GaN was epitaxially related to the initial GaN film exhibiting single crystallinity with flat and smooth surface morphology. Meanwhile, the in-situ-formed BN layer effectively blocked the threading dislocations where its density reductions were comparable to those of typical ex-situ ELOG processes. Furthermore, the BN-assisted ELOG reduced the mosaic of the practical single crystalline GaN grains and drastically improved crystallographic alignment and internal quantum efficiency. More importantly, the BN-assisted ELOG yielded high device performance of the GaN LEDs demonstrating that the benefits of ELOG were fully achieved with the fast and instant fabrication process.https://doi.org/10.1038/s41427-025-00594-8 |
| spellingShingle | Heesoo Kim Anh Thi Dieu Nguyen Beomjun Kim Hyerin Jo Imasda Rahmatulloh Hyobin Yoo Hongseok Oh Aziz Ahmed Hyeonjun Beak Kunook Chung In-situ fabrication of GaN/short-range ordered BN heterostructure light-emitting diodes NPG Asia Materials |
| title | In-situ fabrication of GaN/short-range ordered BN heterostructure light-emitting diodes |
| title_full | In-situ fabrication of GaN/short-range ordered BN heterostructure light-emitting diodes |
| title_fullStr | In-situ fabrication of GaN/short-range ordered BN heterostructure light-emitting diodes |
| title_full_unstemmed | In-situ fabrication of GaN/short-range ordered BN heterostructure light-emitting diodes |
| title_short | In-situ fabrication of GaN/short-range ordered BN heterostructure light-emitting diodes |
| title_sort | in situ fabrication of gan short range ordered bn heterostructure light emitting diodes |
| url | https://doi.org/10.1038/s41427-025-00594-8 |
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